HPQ Silicon Secures UN 38.3 Certification for HPQ ENDURA+ 18650 & 21700 Cells

Clearing the Regulatory Gate for Global Commercial ShipmentsMONTREAL, Dec. 16, 2025 (GLOBE NEWSWIRE) -- HPQ Silicon Inc.
Frontiers

Modeling digital inequality in basic education: a system dynamics simulation of educational continuity

1 Academic Area of Basic Sciences and Modeling, Faculty of Natural Sciences and Engineering, Universidad de Bogotá Jorge Tadeo Lozano, Bogotá D.C., Colombia 2 Secretaría de Educación de Bogotá – Los ...
IEEE

A New Test Algorithm and Fault Simulator of Simplified Three-Cell Coupling Faults for Random Access Memories

Abstract: This study introduces a novel algorithm for the detection of three-cell coupling faults, March ML3C, along with a simulator, TCFS. The March ML3C algorithm targets the detection of ...
IEEE

Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs, and 28-nm Planar SRAMs and Register Files

Abstract: We investigated the effects of positive and negative muons on 12-nm FinFET static random access memories (SRAMs) and 28-nm planar SRAMs and register files (RFs). For 12-nm devices, negative ...