Abstract: The split-gate (SG) silicon carbide (SiC) MOSFETs with excellent high-frequency (HF) characteristics have been prepared, but studies on their reliability are scarce. The degradation of the ...
For advanced bonding schemes and panel operations, there is a high cost to discovering an interface issue late in the flow. Reliability improves when materials are specified as a system rather than as ...
Intel and imec demonstrate the first 300-mm, fab-compatible integration of contacts and gate stacks for 2D transistors, ...
Morning Overview on MSN
MIT finds a new way to pack more transistors on a chip
For decades, chipmakers have squeezed more computing power out of silicon by shrinking transistors, but that strategy is ...
Three years later, Prashanth says Stack Overflow is now very comfortable primarily as an enterprise SaaS business, which provides AI-based solutions that are tailored to different companies’ internal ...
Abstract: This article introduces a novel four-cell nonuniform distributed power amplifier (NDPA) structure where the amplifier is strategically divided into two main sections with the input power ...
Every vendor right now is selling a version of the same dream: AI agents that automate campaign execution, write content, optimize performance and orchestrate entire workflows while you sleep.
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